
The shape of the 1N4007 rectifier diode
Basic parameters:
1N4007 rectifier diode
Maximum forward average rectifying current: 1.0A
Maximum reverse voltage: 1000V
Maximum positive peak surge current: 30A
Forward pressure drop: 1.1V
Maximum reverse leakage current: 5.0uA
The function of the rectifier diode
Rectifier diodes are mainly all kinds of low frequency half wave rectifier circuits. If we want to achieve full wave rectification, we need to connect them to rectifier bridges.
Usually it contains a PN junction with anode and cathode ends. The carriers in the P region are cavitation, and the carriers in the N region are electrons. When the voltage of the P area is positive relative to the N area, it has a low voltage drop (typical value 0.7V), which is called the forward conduction state. If the opposite voltage is applied, the reverse current is very small (reverse leakage current), which is called the reverse blocking state.
Silicon rectifier diode has high breakdown voltage, small reverse leakage current and good high temperature performance. Usually, high-voltage and high-power rectifier diodes are made of high-purity monocrystalline silicon, which is easy to reverse breakdown when doped more. The device has large junction area and can pass through a large current (up to 1000 ANN), but the working frequency is not high, usually below a few KHz.